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The SG-MOSFET uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

• VDS : 100V
• ID (at Vgs=10V) : 14A
• RDS(on)
(at Vgs=10V) : <8.2mΩ
(at Vgs=4.5V) : <10.5mΩ

• Excellent Avalanche Performance