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The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and gate charge.
This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies.

• VDS : 100V
• ID (at Vgs=10V) : 120A
• Typ. RDS(on) (at Vgs=10V) : 3.7mΩ
• Low Gate Charge (typ. Qg = 71nC)
• 100% avalanche tested